Heteroepitaxy and Characterization of Narrow Bandgap Semiconductors on Si Substrates
10am
Room 5508 (Lifts 25-26), 5/F Academic Building, HKUST

Thesis Examination Committee

Prof Iam Keong SOU, PHYS/HKUST (Chairperson)
Prof Kei May LAU, ECE/HKUST (Thesis Supervisor)
Prof Johnny Kin On SIN, ECE/HKUST
 

Abstract

Optoelectronics operating at the mid-infrared wavelength have been increasingly common in a wide range of areas including the defense industry, the automotive industry, and even natural gas detection. Narrow bandgap semiconductors have been the building blocks that have enabled these mid-IR technologies. A problem not unique to just narrow band gap semiconductors, but with most III-V semiconductors is the lack of semi-insulating, large sized, and lattice matched substrates. This prevents a wider deployment of these technologies mainly due to cost. To overcome these challenges, there has been significant effort in integrating III-V semiconductors on the Si platform. With this combination, III-V semiconductors benefit from a well-established and robust manufacturing platform while Si-based circuits benefit from increased functionality and performance. However, compared to GaAs/Si and InP/Si material systems, narrow bandgap semiconductor and Si heteroepitaxy is far less established. In this thesis, the heteroepitaxy of narrow bandgap semiconductors, namely GaSb and InAs, on Si is optimized and characterized to explore limitations and potential. Combining aspect ratio trapping with V-grooved patterned Si substrates, GaSb nanoridges were grown using metal organic chemical vapor deposition and characterized. By studying the heterointerfaces between GaSb and InAs, a GaAsSb-like interface at 500 °C were determined to be the optimal conditions for InAs/GaSb heterostructures integrated onto Si. InAs/GaSb nanoridge metal-oxide-semiconductor field effect transistors were fabricated and exhibited a current density of 135 µA/µm at a Vds of 1 V and a Vg of 0 V. The growth of GaSb thin films onto various types of Si substrates, including V-grooved Si and GaAs on planar Si templates, yielded films of comparable uniformity in lattice parameters to the best grown using molecular beam epitaxy. The growth on planar Si templates yielded the smoothest GaSb films and have potential to serve as GaSb templates for infrared optoelectronics integrated on Si.

日期
時間
10am
地點
Room 5508 (Lifts 25-26), 5/F Academic Building, HKUST
活動形式
講者/ 表演者:
Billy LAI
語言
英文
主辦單位
電子及計算機工程學系
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