Amorphous oxide semiconductors represented by IGZO are practically used as the backplane to drive high precision LCDs and large-sized OLED-TVs. We are developing new materials for OLEDs and Perovskite LEDs. In this seminar, I introduce 3 materials recently created in our group;
- Ultra-wide gap amorphous oxide semiconductors for NBIS-free TFTs
- Mo-based amorphous oxide semiconductors for Organic Electronics by controlling electron affinity
- Lead‐free highly efficient blue‐Emitting phosphor with 0D Electronic Structure
Prof Hideo Hosono received his PhD in Engineering from the Tokyo Metropolitan University in 1982. In 1990, he joined the Nagoya Institute of Technology as an Associate Professor and moved to the Okazaki National Research Institutes in 1995. In 1997, he joined the Tokyo Institute of Technology and is currently a Professor at the Laboratory for Materials and Structures.
Prof Hosono’s research focuses on oxide semiconductor, nanostructured oxide crystal, catalysis, structure analysis by pulsed EPR and devices, including the thin film transistor, light-emitting diode and electron emitter.
Prof Hosono received numerous awards including the Japan Prize (Materials and Production) (2016), the Imperial Prize by the Japan Academy (2015), the Nishina Memorial Prize (2012), and the Bernd T Matthias Prize (2009). He was also elected the Foreign Member of the Royal Society (2017) and the Fellow of the Society for Information Display (2016).