Abstract

Transmission electron microscopy (TEM), with its high spatial resolution and versatile external fields, is undoubtedly a powerful tool for the static characterization and dynamic manipulation of nanomaterials and nanodevices at the atomic scale. The rapid development of thin-film and precision microelectromechanical systems (MEMS) techniques allows 2D layered materials and nanodevices to be probed and engineered inside TEM under external stimuli such as thermal, electrical, mechanical, liquid/gas environmental, optical, and magnetic fields at the nanoscale. Here, taking advantage of advanced in situ transmission electron microscopy, we manipulated interfacial defects in Ⅲ-Ⅴdevices [1, 2] and RRAM [3]. We also observed the whole growth process of the monolayer graphene and MoS2 nanoribbon at real time. The progress of the in situ TEM paves the way to future high-speed and high-reliability devices [4,5].

Figure: In situ transmission electron microscopy, with its versatile external field stimuli, is a powerful tool for the static characterization and dynamic manipulation at the atomic scale.

Biography

Dr. Xing Wu received her bachelor’s degree in Electronic Engineering from Xi’an Jiaotong University (XJTU) China in 2008 and her PhD degree from Nanyang Technological University (NTU) Singapore in 2012 (supervisor: Prof. Kinleong Pey). Then, she worked at the Singapore University of Design and Technology (SUTD) and Southeast University (SEU). She is currently a professor at East China Normal University (ECNU) China. She has published more than 70 SCI journal papers including Nature Communications, Advanced Materials, Small, and Applied Physics Letters with more than 2000 citations. She holds more than 20 patents.