Prof. Bin Gao
Institute of Microelectronics, Tsinghua University
Bin Gao is currently an Associate Professor with the Institute of Microelectronics, Tsinghua University, Beijing, China. He received the B.S. degree in physics from Peking University, Beijing, China, in 2008, and Ph.D. degree in Microelectronics from Peking University in 2013. In 2010, he was a Visiting Scholar with Nanyang Technological University, Singapore, and also with the Institute of Microelectronics, A*STAR, Singapore. In 2012, he was a Visiting Scholar with Stanford University, Stanford, CA, USA. In 2015, he joined Tsinghua University as an Assistant Professor, and became an Associate Professor in 2017. His current research interests include modeling, design and fabrication of emerging semiconductor devices, especially RRAM. He has published more than 100 technical papers, including 38 papers on the IEDM, ISSCC and VLSI, as well as several journal papers on Nature, Nature Electronics, Nature Communications, Proceedings of the IEEE, etc. His total citation is over 5000. He was a recipient of the IEEE EDS Master Student Fellowship in 2009, and a recipient of the IEEE EDS Ph.D. Student Fellowship in 2012. He received China Industry-University Cooperation Innovation Award with GigaDevice in 2017. He serves as MS Sub-Committee Chair of EDTM 2021, and Technical Program Committee Members of IEDM, DAC, IRPS, etc.