Joint Tutorial by ECE Dept and SID (HK) Chapter - Introduction to FinFET Technology & Overview of IC Industry in China
3:00pm - 6:00pm
Rm2304, Lift 17/18, HKUST

The lecture is composed of two parts. In the first part, an introduction to the FinFET technology will be given. After a brief overview of FinFET history, advantages, technology specs, a detailed illustration of FinFET manufacturing flow will be given to show how FinFET device is constructed from scratch on blank silicon substrate. The second part will be an overview of the IC industry in China. It will cover the Chinese IC market and industry growth trend, ecosystem status, competitive strength and weakness of major sectors and the major players. 


 

When
Time
3:00pm - 6:00pm
Where
Rm2304, Lift 17/18, HKUST
Event Format
Speakers / Performers:
Dr. Shaofeng Yu, Professor at Fudan University, Shanghai, China

Dr. Shaofeng Yu graduated from Beijing University with a Bachelor of Science degree in 1985. After receiving his PhD degree from Duke University in the U.S. in 1991, he worked at Intel and Texas Instruments for more than 20 years, engaging in IC process technology development. In 2011, he returned to China and joined SMIC as a VP in Technology R&D. From 2014, he also served as the General Manager of SMIC New Technology Development subsidiary and led the 14-nm technology development, the most advanced logic IC manufacturing platform in China. In 2019, he joined the faculty of Fudan University in the area of microelectronics research and education.

Language
English
Recommended For
Faculty and Staff
PG Students
UG Students
Organizer
Department of Electronic & Computer Engineering
Contact

Prof. Man Wong / Ms. Venus Pang (eevenus@ust.hk)

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