III-Nitride semiconductors have unique properties for radio-frequency (RF) applications and attract growing interest in MEMS community. For example, AlN-based bulk acoustic wave (BAW) filter widely used in the cellular RF front-ends is one of the fastest growing MEMS products since the deployment of 4G LTE. GaN is a rising star in RF and power electronics. With the excellent mechanical properties (similar as AlN), GaN is also a promising material for MEMS and even monolithic RF front-end. This talk firstly introduces some recent development in GaN MEMS devices. It will focus on some novel GaN RF MEMS devices that we developed at the University of Michigan for frequency control applications. In addition, our work on AlN-based MEMS oscillators with improved phase noise for timing application will be demonstrated.
Haoshen Zhu received the B.E. degree in electrical engineering from the Wuhan University of Technology in 2009, and the Ph.D. degree in electronic engineering from the City University of Hong Kong in 2015. He was also a visiting Ph.D student at National Tsing Hua University and Grenoble Institute of Technology in 2012 and 2014, respectively.
After Ph.D graduation, he took various MEMS R&D positions, including a senior MEMS design engineer at RDA Microelectronics, a research fellow at University of Michigan and a Caltech postdoctoral scholar at NASA Jet Propulsion Laboratory. He will join the faculty of South China University of Technology in May 2018.
His current research interests include silicon and III-V semiconductor (i.e. AlN and GaN) based MEMS devices and integrated microsystems for frequency control, timing, and sensing applications.