Abstract

This talk will review some of the opportunities that new semiconductor materials and devices offer to redefine electronics and push it well beyond the limits imposed by Moore’s law and Dennard’s scaling. Specifically, it will study a new generation of GaN-based transistors for RF, power applications and computing. Finally, it will also review how the use of two-dimensional materials like graphene and MoS2 allows to push the limits of microsystems to the cellular level, where new concepts for computing and communications arise.

Biography

Tomás Palacios is a Professor in the Department of Electrical Engineering and Computer Science at MIT. He received his PhD from the University of California - Santa Barbara in 2006, and his undergraduate degree in Telecommunication Engineering from the Universidad Politécnica de Madrid (Spain). His current research focuses on demonstrating new electronic devices and applications for novel semiconductor materials such as graphene and gallium nitride. His work has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers, the IEEE George Smith Award, and the NSF, ONR, and DARPA Young Faculty Awards, among many others. Prof. Palacios is the founder and director of the MIT MTL Center for Graphene Devices and 2D Systems, as well as the Chief Advisor and co-founder of Cambridge Electronics, Inc. He is a Fellow of IEEE.